PRODUCTION OF VAPOR-DEPOSITED Nb{11 B{11 Sn CONDUCTOR MATERIAL

ABSTRACT

Nb3Sn superconductor material of increased critical current density is obtained by carrying out vapor deposition by decomposition of chlorides on a heated corrosion-resistant substrate in the presence of oxygen, for example 0.5 percent oxygen, in a mixed hydrogen and argon gas stream.

United States Patent [72] Inventors Peter B. l-lart;

Christopher Hill; Clifford W. Wilkins, all 01 lliord, Essex, England 817,573

Apr. 18, 1969 Dec. 28, 197 1 The Plessey Company Limited Iliord, Essex, England Apr. 24, 1968 Great Britain Appl. No. [22] Filed [45] Patented [73] Assignee Priority U.S. Cl 117/227, 117/107.2 R, 148/63, 338/32 [51] int. Cl ..C23c 11/00, C23c [H08 [50] Field of Search 1 17/227; 29/599; 338/32; 1l7/107.2 R; 148/63 [56] References Cited UNITED STATES PATENTS 3,429,032 2/1969 Martin et ai. 25/599 3,436,258 4/1969 Neugebauer et al 117/227 X Primary Examiner-William L, Jarvis Attorney-Scrivener Parker Scrivener and Clarke ABSTRACT: Nb Sn superconductor material of increased critical current density is obtained by carrying out vapor deposition by decomposition of chlorides on a heated corrosion-resistant substrate in the presence of oxygen, for example 0.5 percent oxygen, in a mixed hydrogen and argon gas stream.

PRODUCTION OF VAPOR-DEPOSITED NB I SN CONDUCTOR MATERIAL This invention relates to the production of Nb,Sn Niobium- Tin superconductor material.

Niobium Tin of the formula Nb,Sn is a superconductor with a high critical temperature (Tcl8.3 K.), which can sustain a very high critical current density (lc amps/cm) before it loses its superconducting properties and becomes normal. It is thus a valuable material for the construction of superconducting solenoids, where it can be used at fields in excess of 100 k. gauss, but technological problems which arise from the brittle nature of Nb,Sn make it difficult to work the material into suitable tapes and wires.

In one existing process for the fabrication of tape with Nb,Sn layers supported by a metal substrate, Nb,Sn is deposited from the vapor onto a substrate which is a corrosion-resistant alloy having a thermal-expansion coefficient similar to that of Nb,Sn, for example on the material known under the Trade Mark Hastelloy. In this vapor-deposition process the substrate is a resistively heated to 800-1000' C., and Nb,Sn is deposited on the heated substrate by hydrogen reduction of the chlorides of niobium and tin, NbCl, and SnCL. The critical parameter of the niobium-tin deposit for use in solenoid winding is its critical current density, Jc, at a specified field. We have found that in general Jc has an op timum value in deposits formed at deposition temperatures around 800 C., and that its value will drop ofl in deposits formed at higher growth temperatures, while growth rates fall to irnpracticably low levels when the substrate temperature is much below 700 C. In deposits formed at 800 C., typical values of Jo are 23Xl0a./cm.* at 4.2 K. in a field of 50 k. gauss, the current measurement being made with the magnetic field vector perpendicular to the current and parallel to the tape width. Some random variations in .lc are observed from sample to sample, and values of as high as 5Xl0a./cm.' at 50 k. gauss have been observed.

The present invention has for an object to provide an improved vapor-deposition process for Nb,Sn by which remarkably high and consistent Jcs can be obtained. According to the invention, oxygen is introduced into the gas stream used in the vapor-deposition.

While beneficial results have been observed within a range of 0.05 to 5 volume percent of oxygen in the gas stream, optimum results have been achieved with an oxygen concentration of about 0.5 volume percent. The substrate temperature is preferably kept at about 800 C., although the presence of the oxygen will show beneficial results within a temperature range of about 700to l,l00 C., and in order to avoid excessive vapor condensation on the walls of the reaction vessel, it is preferred to use vapor temperatures which are not more than 100 (3., below the substrate temperature.

in one series of experiments, as the oxygen concentration in the gas stream increased from 0.02-l percent by volume, an almost linear increase in 10 was obtained, from 1.8Xl0 to 42x10 a./cm.', conditions being held constant.

Transmission electron-microscope work on vapordeposited Nb,Sn has shown that, while Nb,Sn material as hitherto prepared generally consists of well defined and relatively perfect crystallites ranging from Ola-0.3a in diameter in some cases, up to Zp-Bu in others, samples grown in the presence of oxygen in accordance with the invention showed additional diffraction contrast effects within the Nb,Sn grains, fine lines and diffuse particles having been observed. It is though that precipitation of a niobium-oxygen phase is taking place that these precipitates are acting as flux-priming centers, thus increasing critical current density.

EXAMPLE In the best result obtained so far, a 6%;slayer of Nb,Sn, grown on one-fourth-inch-wide Hastelloy maintained at 800 C., carried 400 a. at 46 k. gauss, a current density of 5.1Xl0 a./cm.'. Deposition was obtained with the flows in the gas stream, measured initially, as follows:

Hydrogen: l,000 cc./minute Argon: 1,350 cc./minute NbCL: 125 cc./minute SnCl 45 ccJminute Oxygen: 12% cc./minute What we claim is:

l. A method of depositing niobium-tin superconductor material on a substrate, which comprises heating the substrate to a temperature not substantially below 700 C., and not substantially higher than l,000 C. and passing over the thus heated substrate a stream of gas including niobium chloride in the vapor state, tin chloride in the vapor state, hydrogen, and between 0.05 volume percent and 5 volume of oxygen.

2. A method as claimed in claim 1, wherein deposition is effected from a gas stream which contains 0.4 to 0.6 volume percent of oxygen.

3. A method as claimed in claim 2, wherein deposition is effected with the substrate maintained at approximately 800C.

4. A method as claimed in claim 1, wherein the temperature of the gas stream is maintained above a minimum level that is C. below the temperature of the substrate.

5. A method as claimed in claim 4, wherein deposition is effected with the substrate maintained at approximately 800C.

6. A method as claimed in claim 5, wherein deposition is effected from a gas stream comprising approximately 39% volume percent of hydrogen, 53 volume percent of argon, 5 volume percent of niobium chloride NbCL, 2 volume percent of tin chloride SnCh, and one-half volume percent of oxygen.

t i i 0 t 

2. A method as claimed in claim 1, wherein deposition is effected from a gas stream which contains 0.4 to 0.6 volume percent of oxygen.
 3. A method as claimed in claim 2, wherein deposition is effected with the substrate maintained at approximately 800*C.
 4. A method as claimed in claim 1, wherein the temperature of the gas stream is maintained above a minimum level that is 100*C. below the temperature of the substrate.
 5. A method as claimed in claim 4, wherein deposition is effected with the substrate maintained at approximately 800*C.
 6. A method as claimed in claim 5, wherein deposition is effected from a gas stream comprising approximately 39 1/2 volume percent of hydrogen, 53 volume percent of argon, 5 volume percent of niobium chloride NbC14, 2 volume percent of tin chloride SnC14, and one-half volume percent of oxygen. 